The work from H. Y. Sun and Z. W. Mao observed the oscillation of Kikuchi line intensity during the epitaxial growth of STO thin film for the first time. The oscillation can reflect the dependence between the surface inner potential and the surface termination. According to the oscillation one can realize precise termination control during the epitaxy of oxide thin films.
H.Y. Sun, Z.W. Mao, T.W. Zhang, L. Han, T.T. Zhang, X.B. Cai, X.Y. Guo, Y.F. Li, Y.P. Zang, W. Guo, J.H. Song, D.X. Ji, C.Y. Gu, C. Tang, Z.B. Gu, N.Wang, Y.Zhu, D. G. Schlom, Y.F. Nie*, and X.Q. Pan, “Chemically specific termination control of oxide interfaces via layer-by-layer mean inner potential engineering”, Nat. Commun. 9 (1), 2965 (2018)
